Gas Purification Application Literature for Semiconductor Manufacturing

Title Sub Process(es) of Interest Process Improvements Business Benefits Products Covered
Application Bulletins
An Advantage of Pall Gaskleen® Purifiers - Orientation Insensitive (PDF)  N/A 
  • Equivalent impurity removal capacities regardless of vertical or horizontal orientation
  • Reduced gas line contamination
  • Low pressure- drop
  • Rapid reaction time 
  • Lower total cost of ownership
  • Reduced purification costs
Dry Etch Process Application Note (PDF) 
  • Wet etch process
  • Reactive ion etching (RIE)
  • Anisotropic etching
  • Magnetically enhanced reactive ion etcher (MERIE)
  • Electron cyclotron resonance (ECR)
  • Sputtering
  • Pure chemical etching
  • Ion-Enhanced Energy-Drive Etching
  • Ion-Enhanced Inhibitor Etching 
  • Greater control over dry etch process variation
  • Higher etch rates
  • Decreased sputtering and plasma-induced surface damage
  • Greater manufacturing yield
  • Increased tool uptime
  • Lower total cost of ownership 
Point of Use (POU) Gas Purification for Atomic Layer Deposition (ALD) Processes (PDF)
  • Thin-film deposition
  • Conformal film deposition
  • Physical vapor deposition (PVD)
  • Chemical Vapor Deposition (CVD)
  • Prevent gaseous contamination of the ALD reactor 
  • Increase yield
  • Reduce total cost of ownership
Pre-epitaxy Deposition Etch (PDF) 
  • Hydrogen Chloride (HCI) Vapor phase etching
  • Silicon wafer etching 
  • Removal of moisture to low levels prevents defects that promote polysilicon growth and distribution system corrosion
  • No metal oxide defects on the water surface or shorts in the circuitry
  • Room temperature operation eliminates need for external heating or cooling 
  • Efficient particle removal without need for additional system components
  • Lower total cost of ownership 
Preventing Contamination in Dielectric Plasma Etch Processes by Installing Point of Use (POU) Pall Purifiers (PDF)
  • Oxide deposition
  • Photolithography
  • Anisotropic etch process
  • Remove numerous gaseous impurities to less than 1 ppb (part per billion)
  • Greater process uniformity
  • Higher process yield 
Protection of Oxygen Sensors in Semiconductor Processing by Utilizing the Pall Gaskleen® SP Assembly (PDF)
  • Rapid Thermal Process (RTP)
  • Atomic Layer Deposition (ALD)
  • Epitaxial Chemical Vapor (epi CVD)
  • Physical Vapor Deposition (PVD) 
  • Protect oxygen sensors in the exhaust stream from fouling
  • Greatly extend time between calibrations
  • Minimize costly tool downtimes
  • Reduce total cost of ownership
Removal of Siloxane Impurities From Silane Gas in the Silicon Epitaxy Process (PDF) 
  • Rapid Thermal Process (RTP)
  • Atomic Layer Deposition (ALD)
  • Epitaxial Chemical Vapor Deposition (Epi CVD) 
  • Physical Vapor Deposition (PVD)
  • Protect oxygen sensors from fouling
  • Extend time between calibrations
  • Remove particulate contamination protecting the oxygen sensor
  • Increased useful periods for sensors
  • Minimize costly tool downtimes
  • Reduced total cost of ownership
Utilizing Pall Gaskleen® Purifiers for CO to Prevent Metal Carbonyls and Moisture Contamination in Dielectric Plasma Etch Processes (PDF) 
  • Oxide Deposition
  • Photolithography
  • Anisotropic Etch
  • Increased removal of moisture and metal carbonyls
  • Reduced nickel contamination of the wafer
  • Reduced total cost of ownership 
Technical Articles
Analytical Methodology for Evaluating Purifiers Containing a Novel Purification Medium for Hydrogen Chloride Gas (PDF) 
  • Semiconductor device fabrication for etching and process chamber cleaning
  • Pre-epitaxial deposition etching 
  • Increased moisture removal from hydrogen chloride (HCI) gas 
Better Chips Need Purer Gases - November, 2004 Clean Rooms (Secured PDF) 
  • Gas filtration and purification
  • Plasma etch
  • Lithography
  • Remove particles and filter contaminants 
  • Enhance semiconductor fabrication yield 
Comprehensive Performance Testing and Characterization of Various Point-Of-Use (POU) Inert Gas Purification Technologies Used in Microelectronics Fabrication Processes - July/August, 2004 Gases & Technology (PDF) 
  • Plasma etch
  • Chemical vapor deposition
  • Sputter
  • Atomic layer deposition
  • Epitaxy process
  • Enhance process and device yield, uniformity and predictability
Eliminating Siloxane Impurities From Silane Process Gas Using Next-Generation Purification - July/August, 2000 Micro (PDF)  N/A 
  • Reduction in siloxane impurites
  • Reduction in film defects to levels required for advanced devices
  • Reduction in downtime of process equipment 
Reducing System Footprint and Operational Costs through Careful Component Selection (PDF) 
  • Plasma etch process 
  • Smaller footprints
  • Increased flow rates
  • Reduction in calibration
  • Longer on-stream life and fewer changeouts
  • No additional heat sources requires
  • Additional free space on the substrate 
  • Lower capital and maintenance costs
  • Increased uptime
  • Higher production
  • Reduced energy expenses
Removal of Metal Carbonyl & Moisture Impurities Through POU Purification of CO Gas - July, 2005 Solid State Technology (Secured PDF)
  • Etch processes 
  • Efficient removal of impurities
  • Enhance device yield
  • More predictable processes 
  • Enhance process yield 
SIMS Analysis of Oxygen Impurity levels when using Point-Of-Use Hydrogen Purification in a Silicon Germanium epitaxial deposition process for a Strained Silicon application (PDF)  N/A
  • Inhibit impurity spikes in the reactor
  • Reduce process and device variation
  • Improve predictability
  • Particle removal 
  • Greater process yield